Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
650V |
30（±V） |
3.5V |
1A |
|
|
8500 (mΩ) |
Plannar |
VBMB165R01 detailed parameter description:
- Model: VBMB165R01
- Brand: VBsemi
-Package: TO220F
- Type: Single N-type power MOSFET
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 8500
- Drain current (ID): 1A
- Technology: Plannar
Domain and module applications：
Application examples:
1. Industrial power module: VBMB165R01 can be used in switching power supplies, inverters and voltage regulators in industrial power modules, providing high performance and reliability.
2. Automotive electronics field: This product is suitable for DC-DC converters, electric vehicle controllers and other modules in automotive electronic systems, and has good electrical performance and temperature characteristics.
3. Solar inverter: In a solar inverter, VBMB165R01 can be used as a key power switching device to convert the DC power generated by the solar panel into AC power.
Please note that these are examples only and actual application will depend on specific design and system requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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