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VBMB1302 Product details

Product introduction:

VBMB1302 is a single N-type MOSFET with 30V drain-source voltage (VDS), 20V gate-source voltage (VGS), 1.7V threshold voltage (Vth), 3mΩ (VGS=4.5V) and an on-resistance (RDS(on)) of 2mΩ (VGS=10V), and a drain current (ID) of 180A. It is manufactured using Trench process and packaged as TO220F.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 30V 20(±V) 1.7V 180A 3 (mΩ) 2 (mΩ) Trench
parameter:
- Single N type
- VDS(V): 30
- VGS(㊣V): 20
-Vth(V)ㄩ1.7
- RDS(on) VGS=4.5V(m次): 3
- RDS(on) VGS=10V(m次): 2
- ID (A): 180
- Technology: Trench
Package: TO220F

Domain and module applications:

Due to its high drain current and low on-resistance characteristics, VBMB1302 is suitable for circuit designs and module applications that require high power and efficiency. For example,
In power modules, it can be used as power switches in direct current-to-direct current (DC-DC) converters and direct current-to-alternating current (DC-AC) inverters;
In industrial control systems, it can be used in fields such as motor controllers and power switch modules.
In addition, due to its TO220F package, it has good heat dissipation performance and is suitable for application scenarios that require long-term high-power operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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