Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-P |
-40V |
20（±V） |
-3V |
-110A |
|
5 (mΩ) |
4 (mΩ) |
Trench |
has the following parameters:
The maximum drain-source voltage (VDS) is -40V, the maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -3V.
When the gate-source voltage is 4.5V, the drain-source resistance is 5m次; when the gate-source voltage is 10V, the drain-source resistance is 4m次.
Its maximum drain current (ID) is -110A.
Domain and module applications：
The VBM2406 transistor is suitable for a variety of fields and modules. For example,
In power amplifier modules, it can be used in audio amplifiers, power amplifiers and power switches.
Due to its high drain-source current and low drain-source resistance, this transistor is particularly suitable for applications requiring high power density and high efficiency.
In power management modules, it can be used in DC-DC converters, power switches and inverters. Additionally, in industrial control modules it can be used for power switching, motor control and sensor interfaces.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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