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VBM2406 Product details
Back to previous pageProduct introduction：
VBM2406 is a single P-type field effect transistor of the VBsemi brand. It has high performance and high reliability. It has broad application prospects in various power control, power management and signal processing modules, and can provide stable performance for electronic equipment in different fields. Reliable performance support.
Using trench technology (Trench). This product is packaged in TO220.
Using trench technology (Trench). This product is packaged in TO220.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-P | -40V | 20（±V） | -3V | -110A | 5 (mΩ) | 4 (mΩ) | Trench |
has the following parameters:
The maximum drain-source voltage (VDS) is -40V, the maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -3V.
When the gate-source voltage is 4.5V, the drain-source resistance is 5m次; when the gate-source voltage is 10V, the drain-source resistance is 4m次.
Its maximum drain current (ID) is -110A.
The maximum drain-source voltage (VDS) is -40V, the maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -3V.
When the gate-source voltage is 4.5V, the drain-source resistance is 5m次; when the gate-source voltage is 10V, the drain-source resistance is 4m次.
Its maximum drain current (ID) is -110A.
Domain and module applications：
The VBM2406 transistor is suitable for a variety of fields and modules. For example,
In power amplifier modules, it can be used in audio amplifiers, power amplifiers and power switches.
Due to its high drain-source current and low drain-source resistance, this transistor is particularly suitable for applications requiring high power density and high efficiency.
In power management modules, it can be used in DC-DC converters, power switches and inverters. Additionally, in industrial control modules it can be used for power switching, motor control and sensor interfaces.
In power amplifier modules, it can be used in audio amplifiers, power amplifiers and power switches.
Due to its high drain-source current and low drain-source resistance, this transistor is particularly suitable for applications requiring high power density and high efficiency.
In power management modules, it can be used in DC-DC converters, power switches and inverters. Additionally, in industrial control modules it can be used for power switching, motor control and sensor interfaces.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
