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VBM2152M Product details

Product introduction:

VBM2152M is a VBsemi brand single-channel P-type metal oxide semiconductor field effect transistor (MOSFET). The device is fabricated using trench technology. The device is packaged in TO220.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-P -150V 20(±V) -2V -18A 150 (mΩ) 140 (mΩ) Trench
Has the following main parameters:

- Rated drain-source voltage (VDS): -150V
- Gate-source voltage (VGS) range: ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (RDS(on)) when gate-source voltage is 4.5V: 150m次
- Drain-source resistance (RDS(on)) when gate-source voltage is 10V: 140m次
- Maximum drain current (ID): -18A

Domain and module applications:

The application of groove technology enables excellent performance in a variety of applications.
For example, in the motor control module, VBM2152M can be used in DC motor drives, electric vehicle control systems and other fields. Its high rated voltage and low on-resistance make it particularly suitable for applications that need to withstand high voltage and high power, such as power switch modules in industrial automation equipment, motor drive modules in power tools, etc.
In addition, its high threshold voltage and large drain current rating also make it an ideal choice for power inverters, solar inverters and other fields.
The high performance and reliability of the VBM2152M enable it to play an important role in a variety of industrial and consumer electronics applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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