Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-P |
-100V |
20（±V） |
-2V |
-18A |
|
178 (mΩ) |
167 (mΩ) |
Trench |
has the following parameters:
The maximum drain-source voltage (VDS) is -100V, the maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -2V.
When the gate-source voltage is 4.5V, the drain-source resistance is 178m次; when the gate-source voltage is 10V, the drain-source resistance is 167m次.
Its maximum drain current (ID) is -18A, using trench technology (Trench).
This product is packaged in TO220.
Domain and module applications：
The VBM2102MA transistor is suitable for a variety of fields and modules.
For example, in power switching modules, it can be used in power inverters, DC-DC converters and battery chargers.
Due to its high drain-source voltage and low drain-source resistance, this transistor is particularly suitable for use in power management and power control applications with high power density and high efficiency. In automotive electronic modules, it can be used in electric vehicle motor control, light driving and battery management systems. Additionally, in industrial control modules it can be used for power switches, motor drives and sensor interfaces.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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