Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
900V |
30（±V） |
3.5V |
15A |
|
|
420 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBM19R15S
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 420
- Maximum drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power modules: Due to its high drain-source voltage and large drain current, VBM19R15S is suitable for industrial power modules such as inverters, DC power supplies and UPS.
2. Solar inverter: As a power switching element in a solar inverter, this product can achieve efficient conversion and output of solar energy.
3. Electric vehicles: In electric vehicles, VBM19R15S can be used to control the start, stop and speed adjustment of the motor to improve the performance and efficiency of electric vehicles.
4. Industrial automation: In industrial control systems, this MOSFET can be used in various motor drive and power switching applications, such as factory automation equipment, robotic arms, etc.
5. Power adapter: Due to its high on-resistance and large drain current, VBM19R15S is suitable for various power adapters, such as laptop chargers, mobile phone chargers, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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