Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
900V |
30（±V） |
3.5V |
11A |
|
|
580 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBM19R11S
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 900V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 580
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications：
Examples of application areas:
1. Industrial power module: VBM19R11S can be used as a switching power supply in industrial power modules to provide stable high-voltage power output and is suitable for factory equipment, machinery and other fields.
2. Electric vehicle charging piles: In electric vehicle charging piles, which need to withstand higher voltages and currents, VBM19R11S can be used as a switching element to control and regulate the charging process.
3. Solar inverter: In solar inverters, high-efficiency power switching devices are required to realize the conversion and output of solar energy. The high voltage and current characteristics of VBM19R11S make it an ideal choice for inverter modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
