Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
900V |
30（±V） |
3.5V |
7A |
|
|
950 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBM19R07S
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 950
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Power converter: Due to its high drain-source voltage and moderate drain current, VBM19R07S is suitable for various power converters, such as switching power supplies, AC-DC converters, etc.
2. Electric vehicles: As a power switching element in electric vehicles, the MOSFET can be used to control the start, stop and speed adjustment of the motor to improve the performance and efficiency of electric vehicles.
3. Industrial automation: In industrial control systems, VBM19R07S can be used in various motor drive and power switching applications, such as factory automation equipment, robotic arms, etc.
4. Solar inverter: As a power switching element in a solar inverter, this product can achieve efficient conversion and output of solar energy.
5. Power management module: Among various power management modules, VBM19R07S can be used for power switch control, such as power switches, voltage stabilizers, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
