Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
900V |
30（±V） |
3.5V |
5A |
|
|
1000(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Product model: VBM19R05SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Rated voltage: VDS=900V, VGS=㊣30V
- Threshold voltage: Vth=3.5V
- Drain-source on-resistance (when VGS=10V): 1000m次
- Maximum drain current: 5A
- Technology: SJ_Deep-Trench
-Package:TO220
Domain and module applications：
Examples of applicable fields and modules:
- Industrial power module: Due to its high rated voltage and large drain current, it is suitable for power modules that require stable high voltage output in the industrial field.
- Renewable energy systems: Inverter modules that can be used in solar or wind power generation systems to provide efficient power conversion.
- Automotive electronic modules: Suitable for power management and drive control modules in automotive electronic systems, such as inverters and charging piles for electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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