Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
950V |
30（±V） |
3.3V |
6A |
|
|
2400 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBM195R06
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Rated voltage: VDS=950V, VGS=㊣30V
- Threshold voltage: Vth=3.3V
- Drain-source on-resistance (when VGS=10V): 2400m次
- Maximum drain current: 6A
- Technology: Plannar
-Package:TO220
Domain and module applications：
Examples of applicable fields and modules:
- Industrial high-voltage power module: Suitable for industrial power modules that require high rated voltage and large drain current, such as high-voltage power equipment and high-voltage industrial control systems.
- Electric vehicle power system: Inverters and motor driver modules that can be used in electric vehicles to provide efficient power conversion and drive control.
- Solar inverter: Suitable for inverter modules in solar power generation systems to achieve conversion and output of solar energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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