VBM195R06 Product details
Product introduction:
VBsemi's VBM195R06 model is a single N-channel field effect transistor (Single N) with the following main parameters:
- Rated drain-source voltage (VDS): 950V
- Rated gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.3V
- Drain-source on-resistance (mΩ) at VGS=10V: 2400
- Maximum drain current (ID): 6A
- Technology: Plannar
-Package:TO220
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 950V | 30(±V) | 3.3V | 6A | 2400 (mΩ) | Plannar |
- Product model: VBM195R06
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Rated voltage: VDS=950V, VGS=㊣30V
- Threshold voltage: Vth=3.3V
- Drain-source on-resistance (when VGS=10V): 2400m次
- Maximum drain current: 6A
- Technology: Plannar
-Package:TO220
Domain and module applications:
- Industrial high-voltage power module: Suitable for industrial power modules that require high rated voltage and large drain current, such as high-voltage power equipment and high-voltage industrial control systems.
- Electric vehicle power system: Inverters and motor driver modules that can be used in electric vehicles to provide efficient power conversion and drive control.
- Solar inverter: Suitable for inverter modules in solar power generation systems to achieve conversion and output of solar energy.
Technical support:
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