Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
950V |
30（±V） |
3.3V |
3A |
|
|
5400 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBM195R03
- Brand: VBsemi
- Type: Single N-type MOSFET
- Maximum drain-source voltage (VDS): 950V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.3V
- Drain-source resistance (m次) at VGS=10V: 5400
- Maximum drain current (ID): 3A
- Technology: Plannar
-Package:TO220
Domain and module applications：
Application examples:
The product is suitable for a variety of fields and modules, such as:
1. Power supply system: Due to its high drain-source voltage and low drain-source resistance, it can be used in power modules such as switching power supplies and DC-DC converters.
2. Lighting control: It can be used as the power switch component in the LED lighting control circuit to realize the adjustment and control of the light.
3. Medical equipment: Suitable for power control and electrical control modules in various medical equipment, such as medical imaging equipment, medical monitors, etc.
4. Industrial automation: It can be used in motor control, frequency converter and other modules in industrial automation systems to improve the stability and efficiency of the system.
The above are some examples of applications of this product in different fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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