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VBM18R20S Product details

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Product introduction：

Product introduction:
VBM18R20S is a VBsemi brand Single N-type field effect transistor with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product uses SJ_Multi-EPI technology and is packaged in TO220.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 800V 30（±V） 3.5V 20A 240 (mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS(V): 800V
- VGS(㊣V): 30V
- Vth(V): 3.5V
- On-resistance when VGS=10V: 240m次
- Maximum drain current (ID): 20A

Domain and module applications：

Examples of applicable fields and modules:
- Industrial power module: VBM18R20S is suitable for high-power switching power supplies and inverters in industrial power modules for power supply and control of industrial equipment.
- Solar inverter: In solar inverters, this product can be used in high-power DC-AC conversion modules to convert the DC power generated by solar panels into AC power that can be used in the grid.
- Electric vehicle drive system: VBM18R20S is suitable for electric vehicle drive systems, such as electric vehicle motor drive controllers, providing high-power electric output and reliable driving performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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