Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
800V |
30（±V） |
3.5V |
15A |
|
|
380 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBM18R15S
- Brand: VBsemi
- Structure: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- Gate-source resistance (RDS(on)) (VGS=10V): 380m次
- Drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications：
Examples of product applicable areas and modules:
1. Industrial power module: With a drain-source voltage of 800V and a drain current of 15A, VBM18R15S is suitable for various industrial power modules, such as for factory equipment, mechanical processing, etc., and can provide stable and reliable power output.
2. Switching power supply: It has low gate-source resistance and high drain-source voltage tolerance. It is suitable for various switching power supplies, such as UPS systems, chargers, etc., and can achieve efficient switching. control.
3. Electric vehicle power control: In the field of electric vehicles, VBM18R15S can be used as a key component in the electric vehicle power control module to control the power output and battery charging and discharging processes of electric vehicles.
To sum up, VBM18R15S is a field effect transistor product with stable performance and wide application. It can be widely used in fields and modules such as industrial power supply, switching power supply and electric vehicle power supply control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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