VBM18R12S Product details
Product introduction:
VBM18R12S is a VBsemi brand Single N-type field effect transistor with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product uses SJ_Multi-EPI technology and is packaged in TO220.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 800V | 30(±V) | 3.5V | 12A | 370(mΩ) | SJ_Multi-EPI |
- VDS(V): 800V
- VGS(㊣V): 30V
- Vth(V): 3.5V
- On-resistance when VGS=10V: 370m次
- Maximum drain current (ID): 12A
Domain and module applications:
- Industrial power module: VBM18R12S is suitable for switching power supplies and power transmission systems in industrial power modules to provide stable power output and efficient energy conversion.
- Solar inverter: In solar inverter, this product can be used in a DC-AC conversion module to convert the DC power generated by the solar panel into AC power that can be used in the grid.
- Electric vehicle charging piles: VBM18R12S is suitable for DC charging modules in electric vehicle charging piles, providing fast and efficient charging services for electric vehicles.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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