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VBM18R12S Product details

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Product introduction：

Product introduction:
VBM18R12S is a VBsemi brand Single N-type field effect transistor with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product uses SJ_Multi-EPI technology and is packaged in TO220.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 800V 30（±V） 3.5V 12A 370(mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS(V): 800V
- VGS(㊣V): 30V
- Vth(V): 3.5V
- On-resistance when VGS=10V: 370m次
- Maximum drain current (ID): 12A

Domain and module applications：

Examples of applicable fields and modules:
- Industrial power module: VBM18R12S is suitable for switching power supplies and power transmission systems in industrial power modules to provide stable power output and efficient energy conversion.
- Solar inverter: In solar inverter, this product can be used in a DC-AC conversion module to convert the DC power generated by the solar panel into AC power that can be used in the grid.
- Electric vehicle charging piles: VBM18R12S is suitable for DC charging modules in electric vehicle charging piles, providing fast and efficient charging services for electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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