Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
800V |
30（±V） |
3.5V |
11A |
|
|
500 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBM18R11S
- Brand: VBsemi
- MOSFET type: Single N-channel
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 500m次
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package: TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Power converter: VBM18R11S can be used in switching power supply modules in industrial power converters to provide efficient power conversion and stable output.
2. Motor drive control: In various industrial automation equipment, this product can be used in motor drive control modules to improve the operating efficiency and response speed of the equipment.
3. Solar inverter: In solar inverter, VBM18R11S can be used for DC to AC energy conversion to achieve efficient and stable output of the solar system.
4. Electric vehicle control: As a key component of the electric vehicle control system, this product can be used in the drive circuit and power management module of electric vehicles to ensure the safety and performance of the vehicle.
5. LED lighting system: In LED lighting systems, VBM18R11S can be used in power drive circuits to achieve efficient brightness adjustment and energy-saving control of LED lights.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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