Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
800V |
30（±V） |
3.5V |
7A |
|
|
850 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBM18R07S
- Brand: VBsemi
- Structure: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- Gate-source resistance (RDS(on)) (VGS=10V): 850m次
- Drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications：
Examples of product applicable areas and modules:
1. Power module: With a drain-source voltage of 800V and a drain current of 7A, VBM18R07S is suitable for various power modules and can provide stable and reliable power output.
2. Switching power supply: With low gate-source resistance and high drain-source voltage tolerance, it is suitable for switching power supply and can achieve efficient switching control, such as for power adapters, UPS systems, etc.
3. Motor drive: In the field of motor drive, VBM18R07S can be used as a power switching element in the motor driver to control the start, stop and speed of the motor, such as in electric vehicles, power tools and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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