Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
800V |
30（±V） |
3.5V |
6A |
|
|
750(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Product model: VBM18R06SE
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 750
- Maximum drain current (ID): 6A
- Technology: SJ_Deep-Trench
-Package:TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Power adapter: Due to its low drain current and high drain-source voltage, VBM18R06SE is suitable for various power adapters, such as laptop chargers, mobile phone chargers, etc.
2. Lighting system: In the LED lighting system, the MOSFET can be used to drive LED lamp beads to achieve dimming and switching control of the light.
3. Power tools: In power tools, VBM18R06SE can be used to drive motors, such as electric drills, electric hammers, etc., to achieve efficient power transmission and control.
4. Electric vehicles: As a power switching element in electric vehicles, the MOSFET can be used to control the start, stop and speed adjustment of the motor to improve the performance and efficiency of electric vehicles.
5. Industrial automation: In industrial control systems, VBM18R06SE can be used in various motor drive and power switching applications, such as factory automation equipment, robotic arms, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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