Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
800V |
30（±V） |
3.5V |
5A |
|
|
1000(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Product model: VBM18R05SE
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 1000m次
- Rated drain current (ID): 5A
- Technology: SJ_Deep-Trench
-Package:TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: Because VBM18R05SE has high voltage and low on-resistance, it is suitable for switching power supplies, inverters and converters in industrial power modules.
2. Electric vehicle power control: In the charging and driving system of electric vehicles, it needs to withstand higher voltage and current. VBM18R05SE can be used as a power switch and controller for the power management and motor drive of electric vehicles.
3. Solar inverter: In a solar power generation system, the inverter is used to convert DC power into AC power. VBM18R05SE can be used as a key component of the solar inverter to help achieve efficient energy conversion.
4. Industrial control module: In the field of industrial automation, control modules require reliable power switching devices to implement various functions. VBM18R05SE can be used for switch control and power management in industrial control modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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