Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
TO220 |
Single-N |
850V |
30(±V) |
3.3V |
10A |
|
|
1150 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBM185R10
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Drain-source voltage (VDS): 850V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.3V
- On-resistance (m次) at VGS=10V: 1150
- Maximum drain current (ID): 10A
- Technology: Plannar
-Package:TO220
Domain and module applications:
Examples of applicable fields and modules:
1. Power adapter: Due to its high drain-source voltage and large drain current, VBM185R10 is suitable for various power adapters, such as laptop chargers, mobile phone chargers, etc.
2. Power tools: In power tools, the MOSFET can be used to drive motors, such as electric drills, electric hammers, etc., to achieve efficient power transmission and control.
3. Industrial automation: In industrial control systems, VBM185R10 can be used in various motor drive and power switching applications, such as factory automation equipment, robotic arms, etc.
4. LED lighting system: In the LED lighting system, this product can be used to drive LED lamp beads to achieve dimming and switching control of the light.
5. Solar inverter: As a power switching element in a solar inverter, VBM185R10 can achieve efficient conversion and output of solar energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours