Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
850V |
30（±V） |
3.5V |
2A |
|
|
6500 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBM185R02
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 850V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 6500m次
- Rated drain current (ID): 2A
- Technology: Plannar
-Package:TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: VBM185R02 has a high drain voltage and rated drain current. It is suitable for switching power supplies, inverters and converters in industrial power modules and can be used in the fields of industrial control and automation.
2. LED lighting control: In LED lighting systems, power switching devices need to withstand high voltages. VBM185R02 can be used for switch control in LED drive circuits to help achieve brightness adjustment and energy-saving control of LED lights.
3. Solar photovoltaic inverter: VBM185R02 can be used as a key component of solar photovoltaic inverter to help achieve efficient conversion of solar energy and access to the grid.
4. Electric vehicle charging piles: In electric vehicle charging piles, power switching devices need to withstand high voltage and current. VBM185R02 can be used for switch control and power management of electric vehicle charging piles to achieve fast charging and safe power supply of electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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