Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
700V |
30（±V） |
3.5V |
20A |
|
|
165(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Model: VBM17R20SE
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO220
- Technology: SJ_Deep-Trench
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 165 m次
- Maximum drain current (ID): 20A
Domain and module applications：
aExamples of applicable fields and modules:
1. Electric vehicle motor driver: VBM17R20SE has the characteristics of high current and low on-resistance. It is suitable for power switch modules in electric vehicle motor drivers and is used to control the electric drive system of electric vehicles.
2. Solar inverter: In solar inverter, high voltage and high current switching devices are required to achieve solar power conversion, and the parameters of VBM17R20SE make it a suitable choice for this application.
3. Power supply module: Due to its high power and high efficiency, VBM17R20SE is suitable for power supply modules, such as power inverters and power switch modules, for power management and power conversion in industrial and consumer electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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