VBM17R20SE Product details
Product introduction:
VBsemi's VBM17R20SE is a Single N-type MOSFET with the following features:
- Brand: VBsemi
-Package: TO220
- Technology: SJ_Deep-Trench
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 165 mΩ
- Maximum drain current (ID): 20A
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 700V | 30(±V) | 3.5V | 20A | 165(mΩ) | SJ_Deep-Trench |
- Model: VBM17R20SE
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO220
- Technology: SJ_Deep-Trench
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 165 m次
- Maximum drain current (ID): 20A
Domain and module applications:
1. Electric vehicle motor driver: VBM17R20SE has the characteristics of high current and low on-resistance. It is suitable for power switch modules in electric vehicle motor drivers and is used to control the electric drive system of electric vehicles.
2. Solar inverter: In solar inverter, high voltage and high current switching devices are required to achieve solar power conversion, and the parameters of VBM17R20SE make it a suitable choice for this application.
3. Power supply module: Due to its high power and high efficiency, VBM17R20SE is suitable for power supply modules, such as power inverters and power switch modules, for power management and power conversion in industrial and consumer electronic equipment.
Technical support:
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