Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
700V |
30（±V） |
3.5V |
20A |
|
|
210 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBM17R20S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (when VGS=10V): 210m次
- Drain current (ID): 20A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Electric vehicle motor drive: The high withstand voltage and high drain current of VBM17R20S make it suitable for inverters and DC-DC converters in electric vehicle motor drive systems.
2. Industrial power module: The product's low on-resistance and high drain current characteristics make it an ideal choice for industrial power modules and can be used for high-power switching power supply control.
3. Solar inverter: In solar inverter, VBM17R20S can be used to achieve high-efficiency DC-AC conversion, converting solar power into usable AC power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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