VBM17R20S Product details
Product introduction:
VBM17R20S is a VBsemi brand single N-channel field effect transistor with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product uses SJ_Multi-EPI technology and is packaged in TO220. Its main features are an on-resistance of 210mΩ (at VGS=10V) and a drain current (ID) of 20A.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 700V | 30(±V) | 3.5V | 20A | 210 (mΩ) | SJ_Multi-EPI |
- Model: VBM17R20S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (when VGS=10V): 210m次
- Drain current (ID): 20A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications:
1. Electric vehicle motor drive: The high withstand voltage and high drain current of VBM17R20S make it suitable for inverters and DC-DC converters in electric vehicle motor drive systems.
2. Industrial power module: The product's low on-resistance and high drain current characteristics make it an ideal choice for industrial power modules and can be used for high-power switching power supply control.
3. Solar inverter: In solar inverter, VBM17R20S can be used to achieve high-efficiency DC-AC conversion, converting solar power into usable AC power.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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