Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
700V |
30（±V） |
3.5V |
12A |
|
|
870 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBM17R12
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance at gate-source voltage 10V: 870m次
- Maximum drain current (ID): 12A
- Technology: Plannar
-Package:TO220
Domain and module applications：
Examples of product applicable fields and modules:
1. Power module: Because VBM17R12 has high drain current and withstand voltage characteristics, it is suitable for various power conversion and power management modules, such as switching power supplies, inverters, etc.
2. Electric vehicle controller: This product can be used as a power switch module in an electric vehicle controller to achieve efficient drive and control of the motor.
3. Industrial control equipment: It can be used in power switch modules in various industrial control equipment, such as PLC, frequency converters, etc., to improve the performance and reliability of the equipment.
4. Solar photovoltaic inverter: suitable for power switch modules in solar photovoltaic inverters to improve the conversion efficiency and stability of the system and achieve efficient utilization of solar energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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