VBM17R11SE Product details
Product introduction:
VBsemi's VBM17R11SE is a single N-channel MOSFET manufactured using SJ_Deep-Trench technology. It has high performance and reliability, and is packaged in TO220, suitable for various applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 700V | 30(±V) | 3.5V | 11A | 360(mΩ) | SJ_Deep-Trench |
- Brand: VBsemi
- Model: VBM17R11SE
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 360m次
- Maximum drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package:TO220
Domain and module applications:
The product is suitable for multiple areas and modules, such as:
- Electric vehicle controller: used in drive control systems for electric vehicles to achieve efficient energy conversion and motor control.
- Industrial power module: can be used for power management and control of industrial equipment, including frequency converters, machine tools, and welding equipment.
- LED lighting driver: suitable for power switching and brightness adjustment of LED lamps to achieve high-efficiency lighting control.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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