Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
700V |
30（±V） |
3.5V |
11A |
|
|
360(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Brand: VBsemi
- Model: VBM17R11SE
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 360m次
- Maximum drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package:TO220
Domain and module applications：
Application example:
The product is suitable for multiple areas and modules, such as:
- Electric vehicle controller: used in drive control systems for electric vehicles to achieve efficient energy conversion and motor control.
- Industrial power module: can be used for power management and control of industrial equipment, including frequency converters, machine tools, and welding equipment.
- LED lighting driver: suitable for power switching and brightness adjustment of LED lamps to achieve high-efficiency lighting control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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