VBM17R10S Product details
Product introduction:
VBM17R10S is a VBsemi brand single N-channel field effect transistor with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product uses SJ_Multi-EPI technology and is packaged in TO220. Its main features are an on-resistance of 600mΩ (at VGS=10V) and a drain current (ID) of 10A.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 700V | 30(±V) | 3.5V | 10A | 600 (mΩ) | SJ_Multi-EPI |
- Model: VBM17R10S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (when VGS=10V): 600m次
- Drain current (ID): 10A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications:
1. Electric vehicle motor drive: Because VBM17R10S has high drain-source voltage and drain current, it is suitable for use in inverters and DC-DC converters in electric vehicle motor drive systems.
2. Industrial power module: The product's low on-resistance and high withstand voltage characteristics make it an ideal choice for switching power supply controllers in industrial power modules.
3. Solar inverter: In solar inverter, VBM17R10S can be used to achieve high-efficiency DC-AC conversion and improve the energy utilization rate of solar panels.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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