Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
700V |
30（±V） |
3.5V |
10A |
|
|
600 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBM17R10S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (when VGS=10V): 600m次
- Drain current (ID): 10A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Electric vehicle motor drive: Because VBM17R10S has high drain-source voltage and drain current, it is suitable for use in inverters and DC-DC converters in electric vehicle motor drive systems.
2. Industrial power module: The product's low on-resistance and high withstand voltage characteristics make it an ideal choice for switching power supply controllers in industrial power modules.
3. Solar inverter: In solar inverter, VBM17R10S can be used to achieve high-efficiency DC-AC conversion and improve the energy utilization rate of solar panels.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
