Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
700V |
30（±V） |
3.5V |
5A |
|
|
1100 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBM17R05S
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO220
- Technology: SJ_Multi-EPI
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 1100 m次
- Maximum drain current (ID): 5A
Domain and module applications：
Examples of applicable fields and modules:
1. Power inverter: Since VBM17R05S has a high drain-source voltage and on-resistance, it is suitable for high-voltage switching modules in power inverters to convert DC power to AC power.
2. Solar inverter: In solar inverters, switching devices with high voltage and low on-resistance are required to achieve solar power conversion, and the parameters of VBM17R05S make it a suitable choice for this application.
3. Automotive electronic systems: The packaging and parameters of VBM17R05S make it suitable for power switch modules in automotive electronic systems, such as electric drive systems and charging systems of electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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