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VBM17R04SE Product details

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Product introduction：

Product introduction:
VBsemi's VBM17R04SE is a single N-channel power MOSFET manufactured using SJ_Deep-Trench technology. Its main features include a maximum drain-source voltage (VDS) of 700V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 1200mΩ at VGS=10V, and a maximum Drain current (ID) is 4A. The package form is TO220.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 700V 30（±V） 3.5V 4A 1200(mΩ) SJ_Deep-Trench
Detailed parameter description:
- VDS(V): 700V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance (m次) when VGS=10V: 1200m次
- ID (A): 4A
- Technology: SJ_Deep-Trench
-Package: TO220

Domain and module applications：

Examples of application areas and modules:
- Low power power module: Suitable for switching power supplies in low power power modules, such as mobile phone chargers and small UPS power supplies.
- LED driver: Can be used as a switching circuit in an LED lighting driver to provide stable LED light output.
- Automotive electronic systems: used as power switches in automotive electronic systems, such as vehicle power management modules and vehicle lighting controllers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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