VBM17R04SE Product details
Product introduction:
VBsemi's VBM17R04SE is a single N-channel power MOSFET manufactured using SJ_Deep-Trench technology. Its main features include a maximum drain-source voltage (VDS) of 700V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 1200mΩ at VGS=10V, and a maximum Drain current (ID) is 4A. The package form is TO220.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 700V | 30(±V) | 3.5V | 4A | 1200(mΩ) | SJ_Deep-Trench |
- VDS(V): 700V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance (m次) when VGS=10V: 1200m次
- ID (A): 4A
- Technology: SJ_Deep-Trench
-Package: TO220
Domain and module applications:
- Low power power module: Suitable for switching power supplies in low power power modules, such as mobile phone chargers and small UPS power supplies.
- LED driver: Can be used as a switching circuit in an LED lighting driver to provide stable LED light output.
- Automotive electronic systems: used as power switches in automotive electronic systems, such as vehicle power management modules and vehicle lighting controllers.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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