Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
700V |
30（±V） |
3.2V |
2A |
|
|
6500 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBM17R02
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Technology: Plannar
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V
- Gate-source voltage threshold (Vth): 3.2V
- On-resistance (RDS(on)) when gate-source voltage is 10V: 6500m次
- Maximum on-current (ID): 2A
-Package:TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Power switch module: VBM17R02 is suitable for switching power supplies and inverter modules in power switch modules, and is used for stable power supply in industrial equipment, communication equipment and other fields.
2. Automotive electronic systems: In automotive electronic systems, this MOSFET can be used in the motor drive module of electric vehicles to achieve efficient power conversion and drive control, improving the performance and energy saving of the vehicle.
3. Solar inverter: VBM17R02 is suitable for power switch modules in solar inverters, converting DC power generated by solar panels into AC power, which can be used in solar power generation systems to realize the utilization of renewable energy.
4. Industrial control module: In industrial automation and control systems, this device can be used as a switching device in the industrial control module to achieve precise control and regulation of various industrial equipment and machinery.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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