VBM175R05 Product details
Product introduction:
VBM175R05 is a Single N-type field effect transistor produced by the VBsemi brand. It is manufactured using Plannar technology and packaged in TO220. The product features a drain-source voltage (VDS) of up to 750V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Its on-resistance at a gate-source voltage of 10V is 2200mΩ, and the maximum drain current (ID) is 5A.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 750V | 30(±V) | 3.5V | 5A | 2200 (mΩ) | Plannar |
- Product model: VBM175R05
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 750V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 2200m次
- Maximum drain current (ID): 5A
- Technology: Plannar
-Package:TO220
Domain and module applications:
1. Power module: Because VBM175R05 has moderate drain current and high withstand voltage characteristics, it is suitable for various power conversion and power management modules, such as switching power supplies, inverters, etc.
2. Electric vehicle charging piles: It can be used as a power switch module in electric vehicle charging piles to achieve a high-efficiency charging process.
3. Industrial control equipment: Suitable for power switch modules in various industrial control equipment, such as PLC, frequency converters, etc., to improve the performance and reliability of the equipment.
4. Solar photovoltaic inverter: suitable for power switch modules in solar photovoltaic inverters to improve the conversion efficiency and stability of the system and achieve efficient utilization of solar energy.
Technical support:
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