Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
750V |
30（±V） |
3.5V |
5A |
|
|
2200 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBM175R05
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 750V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 2200m次
- Maximum drain current (ID): 5A
- Technology: Plannar
-Package:TO220
Domain and module applications：
Examples of product applicable fields and modules:
1. Power module: Because VBM175R05 has moderate drain current and high withstand voltage characteristics, it is suitable for various power conversion and power management modules, such as switching power supplies, inverters, etc.
2. Electric vehicle charging piles: It can be used as a power switch module in electric vehicle charging piles to achieve a high-efficiency charging process.
3. Industrial control equipment: Suitable for power switch modules in various industrial control equipment, such as PLC, frequency converters, etc., to improve the performance and reliability of the equipment.
4. Solar photovoltaic inverter: suitable for power switch modules in solar photovoltaic inverters to improve the conversion efficiency and stability of the system and achieve efficient utilization of solar energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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