VBM16R43S is a high-performance single N-type power MOSFET launched by VBsemi. Manufactured using SJ_Multi-EPI technology, it has excellent electrical properties and stability and is suitable for various industrial and automotive application scenarios.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 600V | 30（±V） | 3.5V | 43A | 60(mΩ) | SJ_Multi-EPI |
Product model: VBM16R43S
Brand: VBsemi
Affiliated company: Shenzhen Weibi Semiconductor Co., Ltd.
Detailed parameter description:
- Polarity: Single N
- Maximum drain-source voltage (VDS): 600V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 60
- Maximum drain current (ID): 43A
- Technology: SJ_Multi-EPI
-Package: TO220
Requirement 3: Application examples
1. Industrial power module: Suitable for industrial-grade power modules, such as frequency converters, power conditioners and DC power supplies, etc., which can provide stable and reliable power output.
2. Electric vehicle power control: It is suitable for electric vehicle power control modules, such as electric vehicle motor controllers, charging piles and battery management systems, etc., which can provide high-efficiency and high-reliability power conversion and control.
3. High-frequency switching module: Suitable for high-frequency switching modules, such as frequency converters, radio frequency regulators and power inverters, etc., which can achieve efficient power switching and frequency regulation to meet the needs of various industrial and automotive applications.
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