Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
600V |
30（±V） |
3.5V |
41A |
|
|
62(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBM16R41SFD
- Brand: VBsemi
- Company: Shenzhen Weibi Semiconductor Co., Ltd.
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 62m次
- Maximum drain current (ID): 41A
- Manufacturing process: SJ_Multi-EPI
-Package form: TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: The high drain-source voltage and high current characteristics of VBM16R41SFD make it suitable for industrial power modules and can be used in applications such as switching power supplies, inverters and frequency converters.
2. Electric vehicle charging piles: The high performance and reliability of this device make it a key component in electric vehicle charging piles and can be used for power switch control of DC fast charging piles and AC charging piles.
3. Solar inverter: VBM16R41SFD can be used as a power switch module in a solar inverter to achieve effective conversion and output of solar photovoltaic energy.
4. Industrial control system: In industrial control systems, this device can be used in modules such as motor control, power distribution and high-voltage switchgear to provide reliable power control and protection functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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