Product introduction details:
VBM16R32S is a TO220 packaged single N-type semiconductor device launched by the VBsemi brand. It has a voltage resistance of 600V (VDS), a maximum current of 32A (ID), and an on-resistance of 85mΩ at VGS=10V. This product adopts SJ_Multi-EPI technology and has excellent performance and stability.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 600V | 30（±V） | 3.5V | 32A | 85(mΩ) | SJ_Multi-EPI |
Detailed parameter description:
- Withstand voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 85m次
- Maximum drain current (ID): 32A
- Technology: SJ_Multi-EPI
- Package type: TO220
Examples of applicable fields and modules:
- Field:
- Industrial power systems: Due to its high withstand voltage and high current characteristics, VBM16R32S is suitable for power switches and inverters in industrial power systems.
- Automotive electronics: In the field of automotive electronics, this product can be used in power electronic modules in electric vehicle controllers and charging systems.
- Solar and wind energy converters: This product can be used as an inverter and power amplifier in solar and wind energy converters.
- Module example:
- Power modules: VBM16R32S can be used to design various types of power modules, including AC/DC converters and motor drivers.
- Inverter Module: Due to its stability and performance, this product is suitable for various inverter modules in industrial and commercial applications for energy conversion and power control.
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