Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
600V |
30（±V） |
3.5V |
10A |
|
|
450 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBM16R10S
- Brand: VBsemi
- Type: Single N MOSFET
- Maximum drain-source voltage (VDS): 600V
- Maximum gate-to-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V: 450m次
- Maximum drain current (ID): 10A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications：
Example application:
1. Power module: Because VBM16R10S has high withstand voltage and current capabilities, it is suitable for power modules such as switching power supplies, power converters and inverters.
2. Electric vehicle controller: Among electric vehicle controllers, VBM16R10S can be used to drive motors and battery management systems to ensure efficient energy conversion and stable power control.
3. Industrial automation: This device can be used in power switches and power management modules in industrial robots, PLCs and automation equipment to provide reliable power control and protection functions.
4. Solar inverter: In solar inverter, VBM16R10S can be used in the DC-AC conversion stage to help convert the DC power collected by the solar panels into AC power for application.
5. Smart home: As a power switching device, this device can be used in modules such as lighting control, power management and electric curtains in smart homes to improve household power utilization efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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