VBM16R10S Product details
Product introduction:
VBM16R10S is a VBsemi brand Single N MOSFET with a voltage resistance of 600V, a maximum gate-source voltage of 30V, and a threshold voltage of 3.5V. The device uses SJ_Multi-EPI technology and is packaged in TO220. Suitable for a variety of power supply and power control applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 600V | 30(±V) | 3.5V | 10A | 450 (mΩ) | SJ_Multi-EPI |
- Model: VBM16R10S
- Brand: VBsemi
- Type: Single N MOSFET
- Maximum drain-source voltage (VDS): 600V
- Maximum gate-to-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V: 450m次
- Maximum drain current (ID): 10A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications:
1. Power module: Because VBM16R10S has high withstand voltage and current capabilities, it is suitable for power modules such as switching power supplies, power converters and inverters.
2. Electric vehicle controller: Among electric vehicle controllers, VBM16R10S can be used to drive motors and battery management systems to ensure efficient energy conversion and stable power control.
3. Industrial automation: This device can be used in power switches and power management modules in industrial robots, PLCs and automation equipment to provide reliable power control and protection functions.
4. Solar inverter: In solar inverter, VBM16R10S can be used in the DC-AC conversion stage to help convert the DC power collected by the solar panels into AC power for application.
5. Smart home: As a power switching device, this device can be used in modules such as lighting control, power management and electric curtains in smart homes to improve household power utilization efficiency.
Technical support:
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