Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
600V |
30（±V） |
3.5V |
8A |
|
|
460(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Product model: VBM16R08SE
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 460m次
- Maximum drain current (ID): 8A
- Manufacturing process: SJ_Deep-Trench
-Package form: TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Low-power electronic products: Because VBM16R08SE has low leakage current and low on-resistance characteristics, it is suitable for various low-power electronic products, such as mobile devices, portable electronic products, etc.
2. LED lighting control: In LED lighting systems, this device can be used in the power switch control module of LED lamps to provide stable power output and efficient power conversion.
3. Power management module: VBM16R08SE is suitable for power management modules, such as switching power supplies, battery charge and discharge management systems, etc., to provide stable and efficient power control and protection.
4. Automotive electronics: In automotive electronic systems, this device can be used in power switch modules such as vehicle charging piles and engine control units (ECUs) to achieve efficient power conversion and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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