VBM16R07S Product details
Product introduction:
VBsemi VBM16R07S is a Single N MOSFET, using SJ_Multi-EPI technology and packaged in TO220. Offers high performance and stability for a variety of power control and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 600V | 30(±V) | 3.5V | 7A | 650 (mΩ) | SJ_Multi-EPI |
- Brand: VBsemi
- Product model: VBM16R07S
- MOSFET type: Single N
- Rated voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 650m次
- Maximum continuous drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications:
1. Industrial motor drive: VBM16R07S has high voltage tolerance and conduction current capability, and is suitable for industrial motor drives, such as motor controllers and frequency converters.
2. Power inverter: In the power inverter, VBM16R07S can be used as a switching tube to achieve power conversion, and is suitable for solar inverters and UPS systems.
3. Automotive electronics: Due to its high performance and reliability, VBM16R07S can be used in automotive electronic systems, such as power conversion modules and charging pile controllers for electric vehicles.
4. Industrial automation: In industrial automation equipment, VBM16R07S can be used as power switches and control components, such as PLC controllers and robot control systems.
Technical support:
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