Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
30（±V） |
3.5V |
32A |
|
|
89(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Product model: VBM165R32SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
-Package: TO220
- VDS (withstand voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 89m次
- Maximum drain current (ID): 32A
- Technology: SJ_Deep-Trench
Domain and module applications：
Examples of application areas and modules:
1. Industrial power supply system: VBM165R32SE can be used in switching power supplies, inverters and other modules in industrial power supply systems to provide stable and reliable power output to meet the needs of industrial equipment.
2. Electric vehicles: In the motor drive system of electric vehicles, this product can be used as a key component to achieve high-efficiency power output and improve the performance and endurance of electric vehicles.
3. Solar inverter: suitable for power switch modules in solar inverters to convert solar energy into usable electrical energy for home and commercial solar power generation systems.
4. Car charging piles: VBM165R32SE can be used as the charge controller module in electric vehicle charging piles to achieve fast and safe electric vehicle charging services and meet the needs of urban transportation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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