Product introduction:
VBM165R32S is a Single N-type MOSFET produced by VBsemi, manufactured using SJ_Multi-EPI technology. The device has a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO220.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 30（±V） | 3.5V | 32A | 85(mΩ) | SJ_Multi-EPI |
Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 85m次
- Maximum drain current (ID): 32A
- Technology: SJ_Multi-EPI
Application example:
- Power module: Since VBM165R32S has a high drain-source voltage and a large drain current, it is suitable for various power modules, such as switching power supplies, inverters and frequency converters.
- Electric vehicle charging piles: The device's high voltage and high current characteristics make it ideal for power switches and inverters in electric vehicle charging piles.
- Solar inverter: Due to its high performance and voltage resistance characteristics, this device can be used in solar inverters to convert DC power generated by solar panels into AC power.
- Industrial electronics: In industrial electronic equipment, the VBM165R32S can be used to drive high-power motors and perform other high-power applications.
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