Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
30（±V） |
3.5V |
25A |
|
|
115(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Brand: VBsemi
- Model: VBM165R25SE
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 115
- Maximum drain current (ID): 25A
- Technology: SJ_Deep-Trench
-Package: TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Power module: VBM165R25SE can be used to design various power modules to ensure stable and reliable power output, suitable for household appliances, power tools and other applications.
2. Industrial control system: In industrial control systems that need to withstand high voltage and large current, it can be used as a power switching device to ensure the performance and stability of the equipment.
3. Solar inverter: suitable for power conversion and control circuits in solar inverters, providing high efficiency and reliability energy conversion solutions.
4. Automotive electronic systems: In automotive electronic systems, it can be used to design on-board power management and drive modules to provide reliable power output and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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