Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
30（±V） |
3.5V |
25A |
|
|
115(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBM165R25S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 115m次
- Maximum drain current (ID): 25A
- Manufacturing process: SJ_Multi-EPI
-Package form: TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Power module: VBM165R25S can be used as a switching power supply module, such as in industrial equipment, communication equipment and household appliances, to achieve high-efficiency power conversion and control.
2. Automotive electronics: This device is suitable for power switch modules in automotive electronic systems, such as engine control units (ECU), battery management systems (BMS) and electric vehicle drive systems, providing efficient power control and protection.
3. Solar inverter: As a key component in solar inverters, VBM165R25S can be used to convert and output photovoltaic energy to achieve stable operation of solar power generation systems.
4. Industrial automation: In industrial control systems, this device can be used in modules such as motor drive, switch control and power regulation to provide reliable power control and protection functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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