Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
30（±V） |
3.5V |
22A |
|
|
280 (mΩ) |
Plannar |
Detailed parameter description:
- Model: VBM165R22
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 280
- Drain current (ID): 22A
- Process technology: flat process
-Package:TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Power module: Due to its high drain voltage and drain current, it is suitable for high-voltage power modules such as switching power supplies and DC-DC converters.
2. Driver module: Driver module that can be used to drive motors, relays and other high-power loads.
3. Electric vehicle charger: suitable for switching power supply and inverter module in electric vehicle charger to achieve high efficiency and fast charging.
4. Industrial control system: used in power management and motor drive modules in industrial control systems to improve system reliability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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