VBM165R22 Product details
Product introduction:
The VBsemi VBM165R22 is a single N-channel field effect transistor with a drain-to-source voltage (VDS) of up to 650V and a drain current (ID) of 22A. Manufactured using planar process technology, it has excellent performance and stability. The package is TO220, suitable for various applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 30(±V) | 3.5V | 22A | 280 (mΩ) | Plannar |
- Model: VBM165R22
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 280
- Drain current (ID): 22A
- Process technology: flat process
-Package:TO220
Domain and module applications:
1. Power module: Due to its high drain voltage and drain current, it is suitable for high-voltage power modules such as switching power supplies and DC-DC converters.
2. Driver module: Driver module that can be used to drive motors, relays and other high-power loads.
3. Electric vehicle charger: suitable for switching power supply and inverter module in electric vehicle charger to achieve high efficiency and fast charging.
4. Industrial control system: used in power management and motor drive modules in industrial control systems to improve system reliability and efficiency.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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