VBM165R18 Product details
Product introduction:
VBsemi's VBM165R18 is a single N-channel power MOSFET manufactured using planar technology. Its main features include a maximum drain-source voltage (VDS) of 650V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 430mΩ at VGS=10V, and a maximum Drain current (ID) is 18A. The package form is TO220.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 30(±V) | 3.5V | 18A | 430 (mΩ) | Plannar |
- VDS(V): 650V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance (m次) when VGS=10V: 430m次
- ID (A): 18A
- Technology: Planner
-Package: TO220
Domain and module applications:
- Industrial power modules: Due to its high drain-source voltage and on-current capability, it is suitable for switching power supplies and inverters in industrial power modules.
- Electric vehicle charger: Able to handle high voltage and current in electric vehicle chargers, improving charging efficiency and performance.
- Solar inverter: used as a switching element in a solar inverter to achieve high-efficiency conversion from solar panels to the grid.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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