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VBM165R18 Product details

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Product introduction：

Product introduction:
VBsemi's VBM165R18 is a single N-channel power MOSFET manufactured using planar technology. Its main features include a maximum drain-source voltage (VDS) of 650V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 430mΩ at VGS=10V, and a maximum Drain current (ID) is 18A. The package form is TO220.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 30（±V） 3.5V 18A 430 (mΩ) Plannar
Detailed parameter description:
- VDS(V): 650V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance (m次) when VGS=10V: 430m次
- ID (A): 18A
- Technology: Planner
-Package: TO220

Domain and module applications：

Examples of application areas and modules:
- Industrial power modules: Due to its high drain-source voltage and on-current capability, it is suitable for switching power supplies and inverters in industrial power modules.
- Electric vehicle charger: Able to handle high voltage and current in electric vehicle chargers, improving charging efficiency and performance.
- Solar inverter: used as a switching element in a solar inverter to achieve high-efficiency conversion from solar panels to the grid.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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