Product introduction：
VBM165R15SE is a unipolar N-type power field effect transistor (MOSFET) with the following characteristics:
- Rated voltage up to 650V, suitable for high voltage application scenarios.
- Wide gate-source voltage range (±30V), with good voltage tolerance.
- Low threshold voltage (3.5V) helps reduce power loss.
- Drain-source resistance is 220mΩ at VGS=10V, providing reliable turn-on characteristics.
- Drain current is 15A, suitable for high power requirements.
- Using SJ_Deep-Trench technology, it has excellent performance and reliability.
- The package is TO220, suitable for installation and heat dissipation in high power applications.
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Domain and module applications：
Examples of applicable fields and modules:
1. Power module: can be used to design high-power power modules, such as industrial power supplies, high-end household appliances, etc.
2. Electric vehicle driver: suitable for drive control modules of electric vehicles, electric motorcycles, etc., providing powerful power output.
3. Industrial equipment: used in power switch modules in industrial robots, CNC machine tools and other equipment to achieve efficient power control.
4. Solar inverter: suitable for power conversion modules in solar power generation systems to improve energy utilization efficiency.
5. High-performance server power supply: The power management module can be used in high-performance servers to ensure stable operation of the server and provide sufficient power support.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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