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VBM165R13S Product details

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Product introduction：

Product introduction: VBsemi's VBM165R13S is a single N-type field effect transistor with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. It is suitable for for various power applications.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 30（±V） 3.5V 13A 330(mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS (drain-source voltage): 650V
- VGS (gate-to-source voltage): ㊣30V
- Vth (gate threshold voltage): 3.5V
- On-resistance (m次) when VGS=10V: 330
- Maximum drain current (ID): 13A
- Technology: SJ_Multi-EPI
-Package:TO220

Domain and module applications：

Application example:
- Power inverter: Due to its high drain-source voltage and large current capacity, it is suitable for solar inverters, UPS inverters, etc.
- Automotive electronics: Can be used in motor drive systems of hybrid vehicles and electric vehicles, supporting high voltage and high power requirements.
- Industrial control: In the field of industrial automation, it can be used in frequency converters, motor controllers and other equipment to provide efficient power conversion and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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