Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
TO220 |
Single-N |
650V |
30(±V) |
3.5V |
11A |
|
|
420 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBM165R11S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 420m次
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications:
Examples of applicable fields and modules:
1. Industrial power module: VBM165R11S is suitable for industrial power modules, such as power inverters and frequency converters, to stabilize output voltage and frequency and realize power supply and control of industrial equipment.
2. Electric vehicle control: In the electric vehicle control system, the MOSFET can be used in the motor drive module to realize the power control and energy conversion of electric vehicles and improve the vehicle's power performance and energy efficiency.
3. Solar inverter: Inverter module used in solar power generation systems to convert DC power generated by solar panels into AC power to supply power to homes and commercial purposes.
4. LED lighting control: In LED lighting systems, VBM165R11S can be used in LED driver modules to control the brightness and color temperature of LED lights to achieve energy-saving and environmentally friendly lighting effects, and is suitable for indoor and outdoor lighting applications.
The above are examples of application of VBM165R11S products in different fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours