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VBM165R09S Product details

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Product introduction：

Product Introduction: VBsemi’s VBM165R09S model is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V . This product is manufactured using SJ_Multi-EPI technology and is packaged in TO220.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 30（±V） 3.5V 9A 500 (mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 500m次
- Maximum drain current (ID): 9A
- Technology: SJ_Multi-EPI
-Package:TO220

Domain and module applications：

Examples of applicable fields and modules:
- Industrial power supply: Due to the drain-source voltage of 650V and the maximum drain current of 9A, it is suitable for industrial power modules such as inverters and DC power supplies.
- Electric vehicle charger: With a gate-source voltage of 30V, it is suitable for switching power supply modules in electric vehicle chargers.
- Solar inverter: SJ_Multi-EPI technology and 500mΩ on-resistance make it suitable for power switching modules in solar inverters to achieve high-efficiency energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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