Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
30（±V） |
3.5V |
8A |
|
|
460(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBM165R08SE
- MOSFET type: Single N
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 460m次
- Maximum continuous drain current (ID): 8A
- Technology: SJ_Deep-Trench
-Package:TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Power module: VBM165R08SE can be used in power modules such as switching power supplies, inverters and voltage regulators, and is suitable for industrial control, communication equipment and electronic equipment.
2. Electric vehicles: In the power conversion module of electric vehicles, VBM165R08SE can be used as a key switching element to achieve efficient energy conversion between the battery pack and the electric motor.
3. Solar inverter: As a key component in solar inverter, VBM165R08SE can realize the conversion and transmission of solar energy and is suitable for solar power generation systems.
4. Industrial automation: In industrial automation equipment, VBM165R08SE can be used as power switches and control components, such as PLC controllers and robot control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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