VBM165R08SE Product details
Product introduction:
VBsemi VBM165R08SE is a Single N MOSFET, using SJ_Deep-Trench technology and packaged in TO220. Offers high performance and stability for a variety of power control and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 30(±V) | 3.5V | 8A | 460(mΩ) | SJ_Deep-Trench |
- Brand: VBsemi
- Product model: VBM165R08SE
- MOSFET type: Single N
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 460m次
- Maximum continuous drain current (ID): 8A
- Technology: SJ_Deep-Trench
-Package:TO220
Domain and module applications:
1. Power module: VBM165R08SE can be used in power modules such as switching power supplies, inverters and voltage regulators, and is suitable for industrial control, communication equipment and electronic equipment.
2. Electric vehicles: In the power conversion module of electric vehicles, VBM165R08SE can be used as a key switching element to achieve efficient energy conversion between the battery pack and the electric motor.
3. Solar inverter: As a key component in solar inverter, VBM165R08SE can realize the conversion and transmission of solar energy and is suitable for solar power generation systems.
4. Industrial automation: In industrial automation equipment, VBM165R08SE can be used as power switches and control components, such as PLC controllers and robot control systems.
Technical support:
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