VBM165R02 Product details
Product introduction:
VBsemi's VBM165R02 is a single N-type power MOSFET designed for high performance and reliability. This product is suitable for a variety of power electronic applications, providing reliable electrical characteristics and stable performance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 30(±V) | 3.5V | 2A | 3900 (mΩ) | 3120 (mΩ) | Plannar |
- Model: VBM165R02
- Brand: VBsemi
-Package: TO220
- Type: Single N-type power MOSFET
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=4.5V: 3900
- Drain-source resistance (m次) at VGS=10V: 3120
- Drain current (ID): 2A
- Technology: Plannar
Domain and module applications:
1. Power module: VBM165R02 can be used in various power modules, such as switching power supplies, inverters and voltage regulators, providing high performance and reliability.
2. Electric vehicle controller: In electric vehicle controllers, this product can be used as a key power switching device for motor drive and control, with excellent electrical performance and temperature characteristics.
3. Solar inverter: In solar inverter, VBM165R02 can be used as a power switching device to convert the DC power generated by the solar panel into AC power to achieve energy conversion and output.
These are examples only, actual application depends on specific design and system requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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