Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
30（±V） |
3.5V |
2A |
|
3900 (mΩ) |
3120 (mΩ) |
Plannar |
VBM165R02 detailed parameter description:
- Model: VBM165R02
- Brand: VBsemi
-Package: TO220
- Type: Single N-type power MOSFET
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=4.5V: 3900
- Drain-source resistance (m次) at VGS=10V: 3120
- Drain current (ID): 2A
- Technology: Plannar
Domain and module applications：
Application examples:
1. Power module: VBM165R02 can be used in various power modules, such as switching power supplies, inverters and voltage regulators, providing high performance and reliability.
2. Electric vehicle controller: In electric vehicle controllers, this product can be used as a key power switching device for motor drive and control, with excellent electrical performance and temperature characteristics.
3. Solar inverter: In solar inverter, VBM165R02 can be used as a power switching device to convert the DC power generated by the solar panel into AC power to achieve energy conversion and output.
These are examples only, actual application depends on specific design and system requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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