Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
30（±V） |
3.5V |
1A |
|
|
8500 (mΩ) |
Plannar |
**Detailed parameter description:**
- Brand: VBsemi
- Model: VBM165R01
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at gate-source voltage 10V: 8500 m次
- Maximum drain current (ID): 1A
- Technology: Plannar
-Package:TO220
Domain and module applications：
**Examples of applicable fields and modules:**
1. **Power Management Module**: VBM165R01 can be used to develop various power management modules, such as switching power supply, battery charge and discharge management, etc. Due to its high voltage and low on-resistance characteristics, it provides reliable power switching functionality.
2. **Industrial Automation**: In the field of industrial automation, this type of MOSFET can be used to control various motors, drives and industrial equipment. Its high voltage and low on-resistance characteristics make it ideal for use in industrial circuits.
3. **Lighting Application**: VBM165R01 can be used in LED driving and lighting systems to control the brightness and switching of LED lights. Its high voltage characteristics allow it to withstand high voltage and power fluctuations in lighting systems.
4. **Solar Inverter**: In solar power generation systems, this type of MOSFET can be used in the power switching circuit in the solar inverter to achieve effective conversion and management of solar energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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