Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
60V |
20（±V） |
3V |
97A |
|
6 (mΩ) |
5 (mΩ) |
Trench |
**Parameter Description:**
- Type: Single N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 60V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=4.5V: 6
- Drain-source resistance (m次) at VGS=10V: 5
- Maximum drain current (ID): 97A
- Technology: Trench
-Package:TO220
Domain and module applications：
Here are some application examples:
1. Power inverter module: Since VBM1606S has high drain-source voltage and drain current capabilities, it is suitable for designing power inverter modules for industrial power systems, solar inverters, and wind power generation. system etc.
2. Motor drive module: This field effect transistor has good turn-on and turn-off characteristics and can be used to design motor drive modules, suitable for electric vehicles, power tools, industrial automation equipment and other fields.
3. Consumer electronics: Since VBM1606S has low on-resistance and high drain current capability, it can be used to design high-performance consumer electronics modules, such as power adapters, LED lighting drivers, etc.
4. Power switch module: This field effect transistor is suitable for designing various types of power switch modules. It can be used in power switches, DC-DC converters, AC-DC converters and other applications to provide efficient energy conversion and stable power output. .
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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