VBM1254N Product details
Product introduction:
- VDS(V): 250V - Drain-source voltage
- VGS(±V): 20V - Gate-source voltage
- Vth(V): 3.5V - Threshold voltage
- VGS=10V(mΩ): 41mΩ - On-resistance when gate-source voltage is 10V
- ID (A): 50A - Drain current
- Technology: Trench - Made using trench technology
- Package: TO220 - TO220 package form
VBM1254N MOSFET is suitable for applications requiring high power, high voltage and efficient energy conversion, including power modules, motor drive modules and industrial electronic modules.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 250V | 20(±V) | 3.5V | 50A | 41 (mΩ) | Trench |
Brand: VBsemi
Parameters: Single N
VDS(V): 250
VGS(㊣V): 20
Vth(V): 3.5
VGS=10V(m次): 41
ID(A): 50
Technology: Trench
Package: TO220
Domain and module applications:
1. Power module: Due to its high drain-source voltage (250V) and high drain current (50A) capabilities, VBM1254N is suitable for high-power power modules such as switching power supplies, inverters and DC-DC converters. Its low on-resistance (41mΩ) and the advantages of trench technology manufacturing enable it to achieve efficient energy conversion and stable performance.
2. Motor drive module: This device is suitable for motor drive modules such as motor controllers, frequency converters and DC motor drivers. Its high voltage and current capability and low on-resistance can meet the requirements of motor drive modules for high power and efficient energy conversion.
3. Industrial electronic modules: VBM1254N is suitable for industrial electronic modules, such as industrial automation control systems, power transmission and distribution systems. Its stable characteristics and fast switching speed enable stable operation in industrial environments and enable efficient energy conversion.
Technical support:
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